| PART |
Description |
Maker |
| NRA104M50 NRS104M50 NRU104M50 NRC224M16 NRC226M20 |
High-Temperature Durability
|
ETC[ETC]
|
| 72974 |
High bandwidth, small size, and durability for confident connections
|
Pomona Electronics
|
| A3195EU A3195LLT 3195 A3195LU A3195 A3195ELT |
PROTECTED, HIGH-TEMPERATURE, HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN 保护，高温，霍尔效应锁存主动下拉
SENSOR IC CAC ANALOG OUT 8-DIP
PROTECTED. HIGH-TEMPERATURE. HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
Protected,High-Temperature,Oper-Collector Hall-Effect Latch(保护型，工作于高温，霍尔效应锁存器（
PROTECTED/ HIGH-TEMPERATURE/ HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
PROTECTED HIGH-TEMPERATURE HALL-EFFECT LATCH WITH ACTIVE PULL-DOWN
From old datasheet system
|
Allegro MicroSystems, Inc.
ALLEGRO[Allegro MicroSystems]
|
| B7100 |
THE Bayfront series features a sturdy aluminum housing for greater durability and a diffusd lens to maximize output uniformity.
|
List of Unclassifed Manufacturers
|
| W0603HT-01-100R-G W0603HT-01-100R-J W1206HT-01-100 |
High Temperature TaNFilm㈢ Chip Resistors
High Temperature TaNFilm垄莽 Chip Resistors
High Temperature TaNFilm? Chip Resistors
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.1 W, 1 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0805
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.0625 W, 5 %, 100 ppm, 100 ohm, SURFACE MOUNT, 0603
High Temperature TaNFilmChip Resistors RESISTOR, METAL FILM, 0.125 W, 2 %, 100 ppm, 100 ohm, SURFACE MOUNT, 1206
|
Welwyn Components Limited
TT Electronics / Welwyn
Welwyn Components, Ltd.
Welwyn Components Limit...
|
| 3197 A3197ELT A3197EU A3197LLT A3197LU A3196LLT A3 |
PROTECTED HIGH-TEMPERATURE OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED, HIGH-TEMPERATURE, OPEN-COLLECTOR HALL-EFFECT LATCH
PROTECTED/ HIGH-TEMPERATURE/ OPEN-COLLECTOR HALL-EFFECT LATCH
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(保护型，工作于高温，集电极开路霍尔效应锁存器)
IC SENSOR QWHEEL ROTARY 14TSSOP
Protected,High-Temperature,Hall-Effect Latch With Active Pull-Down(淇?????宸ヤ?浜??娓╋???????璺??灏??搴??瀛??)
Protected, high-temperature, hall-effect latch with active pull-down
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| D2F-01 D2F-01-T D2F-01-D D2F-01-D3 D2F-01F D2F-01F |
Incorporating a snapping mechanism made with two highly precise split springs that ensures long durability
|
Omron Electronics LLC
|
| HEDS-5120-A13 HEDT-9100 HEDS-5120-A14 HEDT-9101-I0 |
HEDT-9101#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9100#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HEDT-9001#A00 · High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules
HIGH TEMPERATURE 125 DEGREE CELCIOUS TWO CHANNEL OPTICAL INCREMENTAL ENCODER MODULES
ANALOG Replaced PQ025EH02ZPH
High Temperature 125 degrees C Two Channel Optical Incremental Encoder Modules 高温125℃双通道光学增量编码器模
SINGLE, 2 CHANNELS, ROTARY OPTICAL POSITION ENCODER
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Avago Technologies, Ltd.
|
| 125293U020AJ1B 125114U005AJ1B 125114U6R3AC1B 12523 |
The Pace-Setter for Long Life and High Temperature
Type 125 -55 篓卢C to 125 篓卢C, Ultra-High Temperature, Military Grade
Type 125 -55 潞C to 125 潞C, Ultra-High Temperature, Military Grade
Type 125 -55 oC to 125 oC, Ultra-High Temperature, Military Grade
Type 125 -55 ìC to 125 ìC, Ultra-High Temperature, Military Grade
|
Cornell Dubilier Electr...
List of Unclassifed Man...
ETC
List of Unclassifed Manufacturers
http://
Cornell Dubilier Electronics
|
| SB5H100-E3_54 SB5H100-E3_73 SB5H100-E3/54 SB5H100H |
High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
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